IPG20N10S4L35ATMA1 vs BSC027N06LS5ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35ATMA1 by Infineon and BSC027N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon
IPG20N10S4L35ATMA1 ✓ Active
Specification Comparison
| Parameter | IPG20N10S4L35ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Operating Temperature | 175°C max junction | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Automotive Qualification | AEC-Q101 | — |
| MSL Level | MSL1 (up to 260°C peak reflow) | — |
| Series | OptiMOS™, Automotive | OptiMOS™ 5 |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Rated | 100% Avalanche Tested | — |
| Part Status | — | Active |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Operating Temperature Range | — | -55°C to +150°C |
| Pin Count | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |