IPL60R065P7AUMA1 vs IPD60R600P7ATMA1 Comparación
Comparación detallada lado a lado de IPL60R065P7AUMA1 por Infineon y IPD60R600P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPL60R065P7AUMA1 | IPD60R600P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,18 | $0,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOS™ P7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | — |
| Rise Time (t<sub>r</sub>) | 7 ns | — |
| Fall Time (t<sub>f</sub>) | 4 ns | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (T<sub>j</sub>) | -55C to +150C (TJ) |
| Encapsulado | PG-VSON-4 (surface mount with exposed pad) | — |
| Número de pines | 4 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Polarity | Single N-channel | — |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Sin halógenos | Yes | — |
| Part Number | — | IPD60R600P7ATMA1 |
| Series | — | CoolMOS P7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | Superjunction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, TC) | — | 6 A |
| On-Resistance (RDS(on)) | — | 490 mOhm (max) |
| Power Dissipation (PD, TC) | — | 30 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Encapsulado / Carcasa | — | PG-TO252-3 (DPAK), surface mount |
| Generation | — | CoolMOS 7th generation (P7, successor to P6) |
| Ordering Code Suffix | — | ATMA1 = Tape & Reel, 13-inch |