IPL60R105P7AUMA1 vs IPL60R125P7AUMA1 Comparación
Comparación detallada lado a lado de IPL60R105P7AUMA1 por Infineon y IPL60R125P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL60R105P7AUMA1 | IPL60R125P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $1,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Rango de temperatura de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-VSON-4 (4-pin SMD with exposed pad) | ThinPAK 8x8 (4-pin + exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Lead-Free | Yes | — |
| Product Family | — | CoolMOS P7 |
| Continuous Drain Current (ID, Tc=25C) | — | 27 A |
| On-State Resistance RDS(on) max | — | 125 mOhm |
| Gate Charge (Qg, typ) | — | 36 nC |
| Total Gate Charge Qg (typ) | — | 36 nC |
| Output Capacitance Coss (typ) | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr] |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf] |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage VGS(th), typ | — | 3.5 V |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |
| Temperatura de unión de funcionamiento | — | -55 C to +150 C |
| Nivel de sensibilidad a la humedad (MSL) | — | MSL 2 (per JEDEC J-STD-020) |
| Pin Configuration | — | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 |