IPL60R105P7AUMA1 vs IPL60R180P6AUMA1 Comparación
Comparación detallada lado a lado de IPL60R105P7AUMA1 por Infineon y IPL60R180P6AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL60R105P7AUMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $1,92 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Rango de temperatura de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-VSON-4 (4-pin SMD with exposed pad) | PG-VSON-4 (Thin-PAK) surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Lead-Free | Yes | Yes |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| Rango de temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V (typical 3.0 V) |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |