IPL60R105P7AUMA1 vs IPL60R180P6AUMA1 Comparison

Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IPL60R180P6AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL60R105P7AUMA1 IPL60R180P6AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Operating Temperature Range -55C to +150C —
Package PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (Thin-PAK) surface mount
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Halogen Free Yes —
Lead-Free Yes Yes
Gate-Source Voltage (VGS) — -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C — 22.4 A
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V — 180 mΩ
Power Dissipation (Ptot) at Tc=25°C — 176 W
Operating Junction Temperature Range — -55 °C to +150 °C
Storage Temperature Range — -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V (typical 3.0 V)
MSL (Moisture Sensitivity Level) — MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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