IPL60R180P6AUMA1 vs IGLR70R200D2SXUMA1 Comparación
Comparación detallada lado a lado de IPL60R180P6AUMA1 por Infineon y IGLR70R200D2SXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPL60R180P6AUMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $1,24 |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| Rango de temperatura de unión de funcionamiento | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | — |
| Encapsulado | PG-VSON-4 (Thin-PAK) surface mount | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Tipo de montaje | Surface Mount | — |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN G5 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| Rango de temperatura de funcionamiento | — | -40 °C to +150 °C |
| RoHS | — | Compliant |