IPL60R180P6AUMA1 vs IGLR70R200D2SXUMA1 Comparison

Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R200D2SXUMA1 IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ Active

Specification Comparison

Parameter IPL60R180P6AUMA1 IGLR70R200D2SXUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology CoolMOS P6 (Superjunction N-channel MOSFET) GaN HEMT (E-mode, enhancement-mode)
Drain-Source Voltage (VDS) 600 V 700 V
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Operating Junction Temperature Range -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Package PG-VSON-4 (Thin-PAK) surface mount PG-TSON-8-8 (surface mount, ThinPAK top-cooled)
Mounting Type Surface Mount —
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
RoHS Status Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolGaN G5
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 9.3 A
Power Dissipation (PD, Tc) — 34 W
On-Resistance (RDS(on), max) — 200 mΩ
Total Gate Charge (Qg) — 1.26 nC
Output Capacitance (Coss) — 91 pF
Reverse Transfer Capacitance (Crss) — 0.21 pF
Gate Threshold Voltage (VGS(th), typ) — 1.2 V
Operating Temperature Range — -40 °C to +150 °C
RoHS — Compliant

Datasheets & Resources

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