IPL60R180P6AUMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R180P6AUMA1
IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon
IPL60R180P6AUMA1 ✓ ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon
IGLR70R200D2SXUMA1 ✓ ActiveSpecification Comparison
| Parameter | IPL60R180P6AUMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.92 | $1.24 |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| Operating Junction Temperature Range | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | — |
| Package | PG-VSON-4 (Thin-PAK) surface mount | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | — |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN G5 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| Operating Temperature Range | — | -40 °C to +150 °C |
| RoHS | — | Compliant |