IPLU300N04S41R1XTMA1 vs ISC011N06LM5ATMA1 Comparación
Comparación detallada lado a lado de IPLU300N04S41R1XTMA1 por Infineon y ISC011N06LM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPLU300N04S41R1XTMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,45 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 | ISC011N06LM5ATMA1 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS (Trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W | — |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ | — |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Temperatura de unión de funcionamiento | 175 °C | — |
| Peak Reflow Temperature (AEC-Q) | 260 °C | — |
| Encapsulado | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes (100% lead-free) | — |
| Configuration | Single with built-in diode | — |
| Packing | Tape & Reel (TR) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 37 A |
| Continuous Drain Current (ID) at Tc | — | 288 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Recuento de pines | — | 8 |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |