IPN60R360P7SATMA1 vs BSC076N04NDATMA1 Comparación
Comparación detallada lado a lado de IPN60R360P7SATMA1 por Infineon y BSC076N04NDATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPN60R360P7SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,37 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | OptiMOS 3 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | 7.6 mOhm |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (TJ) | — |
| Encapsulado | PG-SOT223 (Surface Mount) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Sin halógenos | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Recuento de pines | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado / Carcasa | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |