IPN60R360P7SATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPN60R360P7SATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN60R360P7SATMA1
IPN60R360P7SATMA1 - 600V 360mΞ© CoolMOS P7 MOSFET | Infineon
IPN60R360P7SATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPN60R360P7SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | OptiMOS 3 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 600 V | β |
| On-Resistance RDS(on) max | 360 mΞ© | 7.6 mOhm |
| Continuous Drain Current (ID) at TC=25Β°C | 9 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | [DATA_NEEDED: ID at TA=25Β°C with standard PCB] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TC=25Β°C | 7 W | β |
| Gate-Source Voltage (VGS) | Β±20 V (max) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | β |
| Package | PG-SOT223 (Surface Mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | β |
| Halogen-Free | Yes (per Infineon datasheet) | β |
| RoHS Compliance | Compliant | β |
| Pin Count | 3 functional + tab (PG-SOT223) | β |
| Body Diode | Integrated, fast-recovery | β |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |