IPN60R360P7SATMA1 vs IPB60R280P7ATMA1 Comparación
Comparación detallada lado a lado de IPN60R360P7SATMA1 por Infineon y IPB60R280P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPN60R360P7SATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,37 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (TJ) | -55 °C to +150 °C (T_j max) |
| Encapsulado | PG-SOT223 (Surface Mount) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Sin halógenos | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Recuento de pines | 3 functional + tab (PG-SOT223) | 3 (2 + Tab) |
| Body Diode | Integrated, fast-recovery | — |
| Product Family | — | CoolMOS P7 (600 V) |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Configuration | — | Single N-Channel |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |