IPN60R360P7SATMA1 vs IPB60R280P7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPN60R360P7SATMA1 par Infineon et IPB60R280P7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPN60R360P7SATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,37 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| Plage de température de fonctionnement | -55°C to +150°C (TJ) | -55 °C to +150 °C (T_j max) |
| Boîtier | PG-SOT223 (Surface Mount) | PG-TO263-3 (D2PAK) |
| Type de montage | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Sans halogène | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Nombre de broches | 3 functional + tab (PG-SOT223) | 3 (2 + Tab) |
| Body Diode | Integrated, fast-recovery | — |
| Product Family | — | CoolMOS P7 (600 V) |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Configuration | — | Single N-Channel |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |