IPP147N12N3GXKSA1 vs IPB027N10N3GATMA1 Comparación
Comparación detallada lado a lado de IPP147N12N3GXKSA1 por Infineon y IPB027N10N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPP147N12N3GXKSA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Tipo de transistor | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max and operating range] | -55°C to +175°C (TJ) |
| Encapsulado | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Through Hole | Surface Mount |
| Número de pines | 3 (3+Tab) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| Estado RoHS | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | — |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |