IPP147N12N3GXKSA1 vs IPB027N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPP147N12N3GXKSA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β Active
Specification Comparison
| Parameter | IPP147N12N3GXKSA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) at Tc=25C | 56 A | β |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | β |
| Power Dissipation (Pd) at Tc=25C | 107 W | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | -55Β°C to +175Β°C (TJ) |
| Package | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Number of Pins | 3 (3+Tab) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | β |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | β |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | β |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| RoHS Status | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | β |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | β |
| Packing Method | Tube | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A |
| Power Dissipation (PD) at TC=25Β°C | β | 300 W |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mΞ© |
| On-Resistance RDS(on) typical at VGS=10V | β | 2.7 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | [DATA_NEEDED: exact Β°C/W value] |
| Single Pulse Avalanche Energy (EAS) | β | [DATA_NEEDED: datasheet EAS figure] |
| MSL Level | β | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg at VGS=10V] |