IPP147N12N3GXKSA1 vs IPW60R041C6FKSA1 Comparación

Comparación detallada lado a lado de IPP147N12N3GXKSA1 por Infineon y IPW60R041C6FKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro IPP147N12N3GXKSA1 IPW60R041C6FKSA1
Marca Infineon Infineon
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo NRND
Estado del stock In Stock In Stock
Precio unitario (USD) $1,62 $5,40
Manufacturer Infineon Technologies —
Series OptiMOS —
Technology OptiMOS 3 trench MOSFET CoolMOS™ C6 (Superjunction N-channel)
Tipo de transistor N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-to-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) at Tc=25C 56 A —
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) —
Power Dissipation (Pd) at Tc=25C 107 W —
Rango de temperatura de funcionamiento [DATA_NEEDED: Tj max and operating range] -55°C to +150°C
Encapsulado PG-TO220-3 (through-hole) PG-TO247-3-1 (TO-247-3)
Tipo de montaje Through Hole Through Hole
Número de pines 3 (3+Tab) —
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] —
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] —
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] —
Avalanche Energy Rating Single-pulse avalanche rated —
Estado RoHS Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes Yes
Qualification Automotive grade (per datasheet.live listing 'Automotive') —
Packing Method Tube —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]
Nivel MSL — Not Applicable (Through-hole)

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