IPP147N12N3GXKSA1 vs IPW60R041C6FKSA1 Vergleich
Detaillierter Direktvergleich von IPP147N12N3GXKSA1 von Infineon und IPW60R041C6FKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP147N12N3GXKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | CoolMOS™ C6 (Superjunction N-channel) |
| Transistortyp | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max and operating range] | -55°C to +150°C |
| Gehäuse | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| Montageart | Through Hole | Through Hole |
| Anzahl der Pins | 3 (3+Tab) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| RoHS-Status | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |
| MSL-Level | — | Not Applicable (Through-hole) |