IPT015N10NF2SATMA1 vs IPB021N10NM5LF2ATMA1 Comparación
Comparación detallada lado a lado de IPT015N10NF2SATMA1 por Infineon y IPB021N10NM5LF2ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPT015N10NF2SATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,10 | $2,75 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Encapsulado | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Gate Drive Voltage (typ) | 10 V | — |
| Energía de avalancha de pulso único | [DATA_NEEDED: EAS value] | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |
| Nivel MSL | — | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |