IPT015N10NF2SATMA1 vs IPB021N10NM5LF2ATMA1 Comparaison
Comparaison détaillée côte à côte de IPT015N10NF2SATMA1 par Infineon et IPB021N10NM5LF2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPT015N10NF2SATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,10 | $2,75 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Plage de température de fonctionnement | -55 °C to +175 °C | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Boîtier | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Gate Drive Voltage (typ) | 10 V | — |
| Énergie d'avalanche à impulsion unique | [DATA_NEEDED: EAS value] | — |
| Statut RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |
| Niveau MSL | — | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |