IPTC054N15NM5ATMA1 vs IQE220N15NM5ATMA1 Comparación
Comparación detallada lado a lado de IPTC054N15NM5ATMA1 por Infineon y IQE220N15NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPTC054N15NM5ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,52 | $0,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25°C | 17.5 A | — |
| Continuous Drain Current (ID) at TC=25°C | 143 A | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 250 W | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΩ | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) typical | 58 nC | — |
| Forward Body Diode Voltage (VSD) | 0.83 V | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TSON-8-5 (Source-Down) |
| Tipo de montaje | Surface Mount (top-side cooled) | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Configuración de salida | — | Single N-Channel |
| Temperatura de funcionamiento | — | -55C to +150C (junction) |
| Technology | — | Trench MOSFET (OptiMOS 5) |