IPTC054N15NM5ATMA1 vs IQE220N15NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de IPTC054N15NM5ATMA1 par Infineon et IQE220N15NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IPTC054N15NM5ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,52 | $0,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25°C | 17.5 A | — |
| Continuous Drain Current (ID) at TC=25°C | 143 A | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 250 W | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΩ | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) typical | 58 nC | — |
| Forward Body Diode Voltage (VSD) | 0.83 V | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | — |
| Boîtier | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TSON-8-5 (Source-Down) |
| Type de montage | Surface Mount (top-side cooled) | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Configuration de sortie | — | Single N-Channel |
| Température de fonctionnement | — | -55C to +150C (junction) |
| Technology | — | Trench MOSFET (OptiMOS 5) |