IQD005N04NM6ATMA1 vs BSC019N08NS5ATMA1 Comparación
Comparación detallada lado a lado de IQD005N04NM6ATMA1 por Infineon y BSC019N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQD005N04NM6ATMA1 - 40V 0.5mΩ N-Ch MOSFET PG-TSON-8-9 | Infineon
IQD005N04NM6ATMA1 ✓ ActivoInfineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQD005N04NM6ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25C | 58 A | — |
| Pulsed Drain Current (IDM) at Tc | 610 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Encapsulado | PG-TSON-8-9 (PQFN 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (N-channel trench) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |