IQD020N10NM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparación
Comparación detallada lado a lado de IQD020N10NM5CGATMA1 por Infineon y IQE036N08NM6CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQD020N10NM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $0,82 |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | -55 C to +175 C (junction, Tj) |
| Encapsulado | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating from datasheet] | MSL1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |