IQD020N10NM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQD020N10NM5CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQD020N10NM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| Operating Temperature Range | -55°C to +175°C | -55 C to +175 C (junction, Tj) |
| Package | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating from datasheet] | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |