IQE004NE1LM7CGATMA1 vs ISC0805NLSATMA1 Comparación
Comparación detallada lado a lado de IQE004NE1LM7CGATMA1 por Infineon y ISC0805NLSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQE004NE1LM7CGATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,06 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | N-Channel Trench Power MOSFET | — |
| Drain-Source Voltage (VDS) | 15 V | 100 V |
| Continuous Drain Current (ID, TA=25C) | 58 A | — |
| Continuous Drain Current (ID, TC=25C) | 379 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 89 W | — |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Encapsulado | PG-TTFN-9-3 (surface mount) | PG-TDSON-8-46 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Packaging | Tape & Reel (CGATMA1 suffix) | — |
| Polarization | N-Channel | — |
| Product Family | — | OptiMOS™ 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 74 W |
| On-Resistance RDS(on) max at VGS=10V | — | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C |