IQE031N08LM6CGSCATMA1 vs IQE018N06NM6CGATMA1 Comparación
Comparación detallada lado a lado de IQE031N08LM6CGSCATMA1 por Infineon y IQE018N06NM6CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE031N08LM6CGSCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $1,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Encapsulado | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 (TOLL/TTFN) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction, typical for OptiMOS 6) | -55C to +175C (junction) |
| Avalanche Tested | 100% avalanche tested | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | — | Compliant |