IQE031N08LM6CGSCATMA1 vs IQE018N06NM6CGATMA1 비교
다음의 상세 나란히 비교: IQE031N08LM6CGSCATMA1 제조: Infineon 및 IQE018N06NM6CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ 활성사양 비교
| 파라미터 | IQE031N08LM6CGSCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $1.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| 패키지 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 (TOLL/TTFN) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 C to +175 C (junction, typical for OptiMOS 6) | -55C to +175C (junction) |
| Avalanche Tested | 100% avalanche tested | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | — | Compliant |