IQE036N08NM6CGATMA1 vs IQE036N08NM6ATMA1 Comparación
Comparación detallada lado a lado de IQE036N08NM6CGATMA1 por Infineon y IQE036N08NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQE036N08NM6CGATMA1 | IQE036N08NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | 125 W |
| Power Dissipation at Ta | 2.5 W | 2.5 W |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction, Tj) | -55°C to +150°C (junction, per datasheet) |
| Encapsulado | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta | — | 16.7 A |
| Continuous Drain Current (ID) at Tc | — | 118 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| On-Resistance RDS(on) typical | — | 3.6 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Energy Rated | — | Yes (single-pulse, per datasheet) |