IQE036N08NM6CGATMA1 vs IQE036N08NM6ATMA1 比較
詳細な並列比較: IQE036N08NM6CGATMA1 メーカー: Infineon および IQE036N08NM6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQE036N08NM6CGATMA1 | IQE036N08NM6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.82 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | 125 W |
| Power Dissipation at Ta | 2.5 W | 2.5 W |
| 動作温度範囲 | -55 C to +175 C (junction, Tj) | -55°C to +150°C (junction, per datasheet) |
| パッケージ | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta | — | 16.7 A |
| Continuous Drain Current (ID) at Tc | — | 118 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| On-Resistance RDS(on) typical | — | 3.6 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Energy Rated | — | Yes (single-pulse, per datasheet) |