IQE050N08NM5CGATMA1 vs IQE031N08LM6CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE050N08NM5CGATMA1 por Infineon y IQE031N08LM6CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ ActivoInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE050N08NM5CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,75 | $0,74 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (Ta) | 16 A | — |
| Continuous Drain Current (Tc) | 101 A | — |
| On-Resistance RDS(on) Max | 5.0 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Encapsulado | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | — |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Temperatura de funcionamiento | -55°C to +175°C (TJ max) | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |