IQE050N08NM5CGATMA1 vs IQE031N08LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQE031N08LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveInfineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.74 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (Ta) | 16 A | β |
| Continuous Drain Current (Tc) | 101 A | β |
| On-Resistance RDS(on) Max | 5.0 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | β |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature | -55Β°C to +175Β°C (TJ max) | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS max) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25C | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 127 A |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | β | Logic-level |
| Operating Temperature Range | β | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Avalanche Tested | β | 100% avalanche tested |
| Lead-Free | β | Yes |