IQE050N08NM5CGSCATMA1 vs IQE036N08NM6CGATMA1 Comparación
Comparación detallada lado a lado de IQE050N08NM5CGSCATMA1 por Infineon y IQE036N08NM6CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE050N08NM5CGSCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,82 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 99 A | — |
| Continuous Drain Current (ID) at TA | 16 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction, typical) | -55 C to +175 C (junction, Tj) |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| Nivel MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Estado RoHS | — | Compliant |
| Configuration | — | Single N-channel, Source-Down |