IQE050N08NM5CGSCATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGSCATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGSCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.82 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC | 99 A | β |
| Continuous Drain Current (ID) at TA | 16 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | β |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Total Power Dissipation at TC (PD) | 100 W | β |
| Total Power Dissipation at TA (PD) | 2.5 W | β |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55 C to +175 C (junction, Tj) |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | β |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| RoHS Status | β | Compliant |
| Configuration | β | Single N-channel, Source-Down |