IQE050N08NM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE050N08NM5CGSCATMA1 por Infineon y IQE220N15NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ ActivoInfineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE050N08NM5CGSCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $2,18 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (ID) at TC | 99 A | — |
| Continuous Drain Current (ID) at TA | 16 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction, typical) | -55C to +150C (junction) |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| Nivel MSL | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| Estado RoHS | — | Compliant |