IQE050N08NM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGSCATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGSCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $2.18 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (ID) at TC | 99 A | β |
| Continuous Drain Current (ID) at TA | 16 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | β |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Total Power Dissipation at TC (PD) | 100 W | β |
| Total Power Dissipation at TA (PD) | 2.5 W | β |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55C to +150C (junction) |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | β |
| MSL Level | 1 | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V |
| RoHS Status | β | Compliant |