IQE065N10NM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Comparación
Comparación detallada lado a lado de IQE065N10NM5CGSCATMA1 por Infineon y IQE008N03LM5SCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQE065N10NM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typical) |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-WHSON-8 (Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (N-Channel) |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55 °C to +150 °C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |