IQE065N10NM5CGSCATMA1 vs IQE008N03LM5SCATMA1 对比
详细并排对比 IQE065N10NM5CGSCATMA1 出自 Infineon 和 IQE008N03LM5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE065N10NM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.28 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typical) |
| 封装 | PG-WHTFN-9-1 (Source-Down) | PG-WHSON-8 (Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (N-Channel) |
| 工作温度范围 | -55 C to +150 C | -55 °C to +150 °C |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |