IQEH68NE2LM7UCGATMA1 vs IAUC120N06S5L015ATMA1 Comparación
Comparación detallada lado a lado de IQEH68NE2LM7UCGATMA1 por Infineon y IAUC120N06S5L015ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ ActivoInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH68NE2LM7UCGATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,35 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (typical for OptiMOS 7) | -55C to +175C (Tj) |
| Encapsulado | PG-TTFN-9-3 (surface mount) | PG-TDSON-8-43 (Surface Mount) |
| Tipo de montaje | Surface Mount | Surface Mount (exposed pad) |
| Nivel MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |