IQEH68NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Comparación
Comparación detallada lado a lado de IQEH68NE2LM7UCGATMA1 por Infineon y IQEH46NE2LM7UCGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ ActivoInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH68NE2LM7UCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,35 | $1,65 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (typical for OptiMOS 7) | — |
| Encapsulado | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL Level] | — |
| Estado RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 7 (trench) |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Polarity / Channel Type | — | Single N-Channel |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |