IRF4905LPBF vs IRF4905PBF Comparación
Comparación detallada lado a lado de IRF4905LPBF por Infineon y IRF4905PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF4905LPBF | IRF4905PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,95 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| Encapsulado | TO-262 (I2PAK), through-hole, 3-pin | TO-220AB (through-hole) |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Tipo de montaje | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PbF suffix) | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | Yes | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -74 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 20 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | 120 nC |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (junction) |
| Pin Configuration | — | Gate - Drain - Source (left to right) |
| Nivel MSL | — | 1 (not moisture-sensitive for TO-220) |