IRF5210PBF vs IRFZ44NPBF Comparación
Comparación detallada lado a lado de IRF5210PBF por Infineon y IRFZ44NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF5210PBF | IRFZ44NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,65 |
| Tipo de transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | 42 nC |
| Power Dissipation (Pd) at Tc | 200 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | — |
| Encapsulado | TO-220AB (through-hole) | TO-220AB (3-pin + tab) |
| Tipo de montaje | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (Advanced Process) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |
| Estado RoHS | — | Compliant |