IRF7205TRPBF vs IRF7319TRPBF Comparación
Comparación detallada lado a lado de IRF7205TRPBF por Infineon y IRF7319TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7205TRPBF | IRF7319TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,18 | $0,62 |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET (4th generation) | IR MOSFET / Fifth Generation HEXFET |
| Drain-to-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | -4.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=-10V | 70 mΩ | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | 130 mΩ | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -3.0 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Disipación de potencia (TC=25°C) | 2.5 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +150 °C | — |
| Encapsulado | SO-8 (8-SO) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Lead-Free (PBF suffix), RoHS compliant | — |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (TR suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Configuration | — | N-Channel + P-Channel (complementary half-bridge) |