IRF7205TRPBF vs IRF7319TRPBF 对比

详细并排对比 IRF7205TRPBF 出自 Infineon 和 IRF7319TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7205TRPBF IRF7319TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.18 $0.62
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) IR MOSFET / Fifth Generation HEXFET
Drain-to-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
功耗(TC=25°C) 2.5 W —
工作结温 -55 °C to +150 °C —
封装 SO-8 (8-SO) —
安装类型 Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) Tape & Reel (TR suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
工作温度范围 — -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Configuration — N-Channel + P-Channel (complementary half-bridge)

数据手册与资源

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