IRF7306TRPBF vs IRFL4315TRPBF Comparación
Comparación detallada lado a lado de IRF7306TRPBF por Infineon y IRFL4315TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7306TRPBF | IRFL4315TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,39 |
| Polarity | P-Channel (dual) | — |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | — |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | IR MOSFET™ (planar/HEXFET-style) |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) | [DATA_NEEDED: T_J min/max] |
| Encapsulado | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | SOT-223 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (TRPBF) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | — | 150 V |
| Continuous Drain Current (I_D) at 25°C | — | 2.6 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: I_DM rating] |
| R_DS(on) max at V_GS=10V | — | 185 mΩ |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typ/min/max] |
| Total Gate Charge Q_G | — | 12 nC |
| Gate-to-Source Voltage V_GS | — | ±30 V (max) |
| Continuous Source Current (Body Diode I_S) | — | 1.6 A |
| di/dt (Body Diode) | — | 230 A/μs |
| Power Dissipation (Ta) | — | 2.8 W |
| Qualification Standard | — | Industrial market (per Infineon datasheet) |
| Lead-Free / RoHS | — | Lead-free (PBF suffix); RoHS compliant |