IRF7306TRPBF - Dual P-Ch -30V 3.6A HEXFET MOSFET | Infineon
N.º de pieza: IRF7306TRPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.05 | $1,05 |
| 10 | $0.92 | $9,20 |
| 100 | $0.78 | $78,00 |
| 500 | $0.66 | $330,00 |
| 1.000 | $0.55 | $550,00 |
IRF7306TRPBF Descripción general
A P-channel power MOSFET is a type of field-effect transistor whose majority carriers are holes rather than electrons. This makes it naturally suited to high-side switching in low-voltage systems, because a P-channel device can be turned on by pulling its gate toward ground relative to the source, eliminating the need for a charge pump or bootstrap circuit that an N-channel device requires at the high side. P-channel MOSFETs occupy a specific place in the broader taxonomy of discrete semiconductors: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor -> semiconductor device. Within Infineon's portfolio, this part belongs to the HEXFET Power MOSFET family aimed at consumer-market qualification standards.
The IRF7306TRPBF integrates two matched P-channel transistors, which simplifies PCB layout by halving the number of discrete switches needed for complementary or synchronous tasks such as full H-bridge drivers, USB power switches, and Li-ion battery pack protection. Its low on-resistance per silicon area, combined with fast switching speed and ruggedized avalanche-rated die, makes it efficient for use as a low-side reverse-battery blocker or load disconnect switch. The 8-SO footprint allows drop-in compatibility with many competing dual P-channel SO-8 parts, supporting board-level second sourcing. A logic-level-compatible gate threshold further enables direct drive from 3.3V or 5V microcontrollers without dedicated gate-driver ICs. The part is supplied in tape-and-reel packaging for high-volume SMT assembly lines.
Typical applications include load switching in portable and battery-powered equipment, USB power-distribution switches, DC motor direction control in low-voltage H-bridges, Li-ion battery protection circuits, and general-purpose power management in consumer and industrial designs. The dual configuration is particularly attractive for space-constrained boards where two independent switches are needed and PCB area is at a premium.
When designing with this part, pay close attention to gate-drive levels: at -10V VGS the device achieves its specified 100 mOhm RDS(on), but at lower gate drive the on-resistance rises significantly and conduction losses increase. Ensure that the SO-8 thermal pad is soldered to an adequate copper pour; with 2W rating in SO-8, thermal derating begins well below 1A continuous current unless board cooling is provided.
This page synthesizes distributor stock, parametric pricing, drop-in alternatives, and practical board-level design notes not always presented together on manufacturer or distributor product pages.
Alternativas directas para IRF7306TRPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRF7306TRPBF (mismo factor de forma y huella) — difiere en Technology, Package, Continuous Drain Current (ID), FET Type, Manufacturer.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRF7314PBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRF7379
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRF7324
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
VBA4338
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
Si4946BEY
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRF7306TRPBF Valores máximos y características eléctricas
| Polarity | P-Channel (dual) |
| Number of Channels | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) | -3.6 A at 25°C |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V |
| Maximum Power Dissipation | 2 W at TA = 25°C |
| Technology | HEXFET Power MOSFET (Generation V) |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) |
| Encapsulado | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| Tipo de montaje | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Nivel MSL | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) |
| Avalanche Rated | Yes (ruggedized device per datasheet) |
Configuración de pines de IRF7306TRPBF
| Pin 1 | G1 — Gate of P-channel FET Q1 |
| Pin 2 | S1 — Source of P-channel FET Q1 |
| Pin 3 | D1 — Drain of P-channel FET Q1 |
| Pin 4 | S2 — Source of P-channel FET Q2 |
| Pin 5 | D2 — Drain of P-channel FET Q2 |
| Pin 6 | D2 — Drain of P-channel FET Q2 (parallel to pin 5 in standard SO-8 dual P-FET layout) |
| Pin 7 | S1 — Source of P-channel FET Q1 (parallel to pin 2) |
| Pin 8 | G2 — Gate of P-channel FET Q2 |
Área de funcionamiento seguro - DC
Aplicaciones típicas
IRF7306TRPBF es adecuado para 7 aplicacións: USB VBUS Power Switch, Li-Ion Battery Protection (1S Pack), DC Motor H-Bridge (Low-Voltage), Portable / Battery-Powered Equipment Load Switch, Reverse-Battery / Reverse-Polarity Protection, Industrial 24V Switching and Signal Routing, Power ORing and Source Selection.
USB VBUS Power Switch
The IRF7306TRPBF's dual P-channel SO-8 configuration is well suited to USB VBUS high-side switching in 5V consumer designs. With a -30V VDS rating it comfortably exceeds the 5V USB rail, and its 100 mOhm maximum RDS(on) at -10V VGS yields only about 90 mV drop at 900 mA, well within USB 2.0/3.0 specifications. The two integrated FETs allow designers to switch both VBUS and OTG paths from one IC, halving PCB footprint versus discrete single-FET designs. Logic-level gate drive is achievable from a 5V rail but not from 3.3V GPIO without a charge pump.
Recomendado
Li-Ion Battery Protection (1S Pack)
Single-cell Li-ion battery packs require dual P-channel MOSFETs for charge/discharge control FETs in the protection circuit. The IRF7306TRPBF delivers -30V VDS (well above 4.2V max cell voltage) and -3.6A continuous drain current that matches typical 1S pack discharge ratings up to about 2C on 1500 mAh cells. Its 100 mOhm RDS(on) per FET yields total path resistance of about 200 mOhm through the dual-FET pack, which is acceptable for most 1S applications but should be evaluated against protection-IC trip thresholds.
Recomendado
DC Motor H-Bridge (Low-Voltage)
The dual P-channel configuration of the IRF7306TRPBF can drive the high side of a low-voltage brushed DC motor H-bridge when paired with two N-channel low-side FETs. The part's -30V rating covers motors up to 24V, and its 3.6A continuous rating supports small gear-motors in robotics, toys, and appliances. The HEXFET Generation V process provides fast switching for PWM frequency control up to 25 kHz. For higher-current motors the 2W SO-8 power dissipation becomes the limiting factor - thermal derating is critical above 2A continuous.
Recomendado
Portable / Battery-Powered Equipment Load Switch
The IRF7306TRPBF is widely used as a load-disconnect switch in portable and battery-powered products such as handheld instruments, wearables, and IoT sensor modules. Its -30V rating handles battery and charger transients, while the 100 mOhm RDS(on) keeps quiescent losses below 1 mW at typical sensor-node loads of 100 mA. The dual P-channel SO-8 footprint is a standard second-source package, supporting aggressive BOM consolidation strategies. For ultra-low-power IoT applications an even lower-RDS(on) part in DFN may be preferred.
Recomendado
Reverse-Battery / Reverse-Polarity Protection
For reverse-battery and reverse-polarity protection in 12V lead-acid and 24V industrial systems, the IRF7306TRPBF can be configured as a high-side P-channel blocker. Its -30V VDS comfortably exceeds 24V nominal rail voltage, and its avalanche rating (ruggedized die per datasheet) absorbs the inductive kick from motor and relay loads. With a P-channel in the high side, no charge pump is required, simplifying the BOM versus N-channel reverse-blocker designs. Pair with a TVS or SMBJ5.0A for transient protection.
Recomendado
Industrial 24V Switching and Signal Routing
Industrial 24V PLC and process-control systems use the IRF7306TRPBF for high-side load switching of sensors, relays, and small solenoids. The -30V VDS provides adequate margin above 24V nominal with transient tolerance per IEC 61131-2. The dual-channel SO-8 lets a single part handle two 24V channels, reducing PCB area in dense PLC I/O modules. For higher-current loads above 1A continuous, the 2W SO-8 thermal budget requires board-level cooling or migration to a TO-220 or DPAK package.
Recomendado
Power ORing and Source Selection
In redundant-power or USB-C dual-source designs, the IRF7306TRPBF can serve as a P-channel ORing element on each supply rail. Its low RDS(on) of 100 mOhm keeps the diode-equivalent drop at about 360 mV at 3.6A, much better than a Schottky diode's typical 300-500 mV at high temperature. The dual-FET SO-8 footprint allows source 1 and source 2 ORing in a single package for compact designs. For higher-efficiency ORing, an ideal-diode controller such as the LM5050 paired with lower-RDS(on) N-channel FETs is preferred.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRF7306TRPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRF7314PBF | IRF7379 | IRF7324 | VBA4338 | Si4946BEY |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Vishay Intertechnology |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Polarity / Channels | Dual P-Channel | Dual P-Channel | Dual P-Channel | Dual P-Channel | Dual P-Channel | Dual P-Channel |
| Drain-to-Source Voltage (VDS) | -30 V | -30 V | -30 V | -20 V | -30 V | -30 V |
| Continuous Drain Current (ID) | -3.6 A | -3.6 A | -3.6 A | -3.5 A | -3.6 A | -3.5 A |
| On-Resistance RDS(on) max | 100 mOhm @ VGS = -10V | ~115 mOhm @ VGS = -10V | ~105 mOhm @ VGS = -10V | ~110 mOhm @ VGS = -10V | ~100 mOhm @ VGS = -10V | ~115 mOhm @ VGS = -10V |
| Technology | HEXFET Gen V | HEXFET Gen III/IV | HEXFET Gen V | HEXFET Gen V | Trench P-channel | TrenchFET |
| Maximum Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2 W |
| RoHS Compliant | Yes (Pb-free PBF suffix) | Yes (Pb-free) | Yes | Yes | Yes | Yes |
| Indicative Price (qty 1, USD) | 1.05 | ~0.95 | ~1.10 | ~0.85 | ~0.65 | ~0.95 |
Diferenciadores clave
- Generation V HEXFET process for lower RDS(on) per silicon area (frente a IRF7314PBF)
- -30V breakdown rating for 24V industrial margin (frente a IRF7324)
- Wide authorized distributor availability as a long-life Infineon part (frente a VBA4338 (VBsemi Chinese-domestic alternative))
Notas de diseño
The IRF7306TRPBF is rated for 2W total power dissipation in the SO-8 package at TA = 25°C. Estimated: at -3.6A continuous and 100 mOhm RDS(on) per FET, conduction loss per device is roughly I^2 x R = 3.6^2 x 0.1 = 1.3W. Driving both FETs at full load simultaneously exceeds the package rating unless the SO-8 thermal pad is soldered to at least 1 square inch of copper pour on a 2-layer FR-4 board. Above 1.5A continuous per channel, thermal derating reduces available current and reliability suffers.
Solder the exposed thermal pad of the SO-8 to a continuous copper pour on the top layer for heat spreading. Use multiple thermal vias (8-12 vias, 0.3 mm drill) under the pad to conduct heat to inner and bottom copper layers. Keep high-current drain traces wide (>= 1 mm per ampere for 1 oz copper) and avoid right-angle bends that create current crowding. Place gate-drive resistors (typically 10-100 ohms) close to the gate pins to dampen parasitic ringing.
Do not assume the IRF7306TRPBF is fully enhanced at -3.3V or -5V gate drive. The 100 mOhm RDS(on) specification is at VGS = -10V; at lower gate drive on-resistance rises significantly and conduction loss grows nonlinearly. For 3.3V GPIO-controlled applications select a logic-level P-channel MOSFET (VGS(th) <= -1.5V, full enhancement at -2.5V). Also, never exceed -30V VDS; inductive loads (motors, relays) need a flyback or TVS clamp across drain-to-source.
Keep the gate-drive loop area small to minimize parasitic inductance that causes gate-oscillation and possible dv/dt-induced turn-on of the complementary FET. Place the gate-drive resistor and any gate-source pull-down resistor (typically 10-100 kOhm to keep the FET off when the driver is tri-stated) within 3 mm of the gate pin. Separate the high-current drain/source loops from the gate-drive loop area; a wide copper ground pour acts as a return path shield.
Información de cumplimiento
RoHS and lead-free per 'PBF' suffix in MPN and per Infineon product page. Consumer market qualification per IR/Infineon datasheet (not AEC-Q100 qualified for automotive). REACH status and conflict-minerals compliance inferred from Infineon corporate compliance statements; halogen-free status not explicitly stated in retrieved data.
