IRF7309TRPBF vs IRF7832TRPBF Comparación
Comparación detallada lado a lado de IRF7309TRPBF por Infineon y IRF7832TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7309TRPBF | IRF7832TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,35 | $0,92 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | — |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | HEXFET (trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55 C to +150 C (TJ) |
| Encapsulado | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL-1 (unlimited floor life per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| Estado RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Lead-Free | — | Yes |