IRF7469TRPBF vs BSC097N06NSATMA1 Comparación
Comparación detallada lado a lado de IRF7469TRPBF por Infineon y BSC097N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7469TRPBF | BSC097N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,37 | $0,38 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET™ (HEXFET) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (Tj) | — |
| Encapsulado | 8-SO (SOIC-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | 1 (Unlimited) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Encapsulado / Carcasa | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |