IRF8736PBF vs BSO150N03MDGXUMA1 Comparación
Comparación detallada lado a lado de IRF8736PBF por Infineon y BSO150N03MDGXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRF8736PBF | BSO150N03MDGXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,45 | $0,37 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TA=70°C | [DATA_NEEDED: ID at TA=70°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) | — |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) | — |
| Total Gate Charge Qg | 17 nC (typical) | — |
| Maximum Power Dissipation at TA=25°C | 2.5 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) | -55C to +150C |
| Encapsulado | SO-8 (8-SO) | PG-DSO-8 (SO-8 with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (Unlimited) | 1 (unlimited) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant | — |
| Qualification Standard | JEDEC | — |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Technology | — | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| Estado RoHS | — | Compliant |
| Channel Configuration | — | Dual N-Channel (independent) |