IRF8736PBF - 30V 18A N-Channel HEXFET MOSFET SO-8 | Infineon
N.º de pieza: IRF8736PBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.74 | $370,00 |
| 1.000 | $0.58 | $580,00 |
| 3.000 | $0.45 | $1.350,00 |
IRF8736PBF Descripción general
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate conduction between drain and source. Within the broader taxonomy, the IRF8736PBF belongs to the N-channel enhancement-mode MOSFET family, which itself is a sub-class of discrete power transistors and ultimately falls under power semiconductor devices used in power management and switching conversion. MOSFETs of this type are the workhorse of synchronous rectification, where their very low RDS(on) minimizes conduction loss and improves system efficiency compared to diode-based rectification.
Key features include a logic-level gate threshold that allows direct drive from 5 V microcontrollers or PWM controllers, low gate charge of 17 nC for fast switching transitions, very low RDS(on) of 4.8 mΩ at VGS=10 V to minimize I²R losses, fully characterized avalanche ruggedness, and 100 % tested gate resistance (Rg) for predictable parallel operation. The industry-standard SO-8 footprint also enables wave-soldering and standard PCB assembly flows.
Internally the IRF8736PBF uses Infineon's HEXFET stripe-cell planar technology with a trench-style current-spreading layout. This cell architecture trades a slightly higher specific on-resistance than pure trench MOSFETs for an exceptionally low gate charge and proven avalanche capability, which is important in synchronous-rectifier and hot-swap applications where the body diode is repeatedly commutated.
Typical applications include synchronous rectification in isolated DC-DC converters for networking and telecom systems, low-side switches in notebook processor VRM stages, battery protection and hot-swap circuits, and OR-ing FETs in redundant 12 V power architectures. The wide 30 V drain rating also gives enough margin for 19 V notebook adapters and 24 V industrial rails.
When designing with this part, pay attention to PCB layout for the SO-8 drain tab. The exposed pad is the drain; without adequate copper pour the device will derate heavily at high currents. A 1 oz copper area of at least 1 in² is recommended for full 18 A operation.
Alternativas directas para IRF8736PBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRF8736PBF (mismo factor de forma y huella) — difiere en Operating Temperature Range, Package, Technology, MSL Level, Avalanche Rated.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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IRF8736PBF Valores máximos y características eléctricas
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | 2.5 W |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) |
| Encapsulado | SO-8 (8-SO) |
| Tipo de montaje | Surface Mount |
| Nivel MSL | 1 (Unlimited) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant |
| Qualification Standard | JEDEC |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) |
Configuración de pines de IRF8736PBF
| Pin 1 | S — Source (internally connected to pins 2 and 3) |
| Pin 2 | S — Source (internally connected to pins 1 and 3) |
| Pin 3 | S — Source (internally connected to pins 1 and 2) |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (internally connected to pins 6, 7, 8 and exposed tab) |
| Pin 6 | D — Drain (internally connected to pins 5, 7, 8 and exposed tab) |
| Pin 7 | D — Drain (internally connected to pins 5, 6, 8 and exposed tab) |
| Pin 8 | D — Drain (internally connected to pins 5, 6, 7 and exposed tab) |
Aplicaciones típicas
IRF8736PBF es adecuado para 6 aplicacións: Notebook CPU/GPU VRM Synchronous Buck, Isolated DC-DC Converter Synchronous Rectifier, Hot-Swap / Load Switch on 12V Distribution, Battery Protection and OR-ing in Battery Packs, Motor Drive Low-Side Switch (Brushless DC), Point-of-Load (POL) Buck Converter Output Stage.
Notebook CPU/GPU VRM Synchronous Buck
The IRF8736PBF is widely used as the low-side synchronous MOSFET in 2- to 4-phase buck converters powering notebook CPU and GPU cores. Its 4.8 mΩ RDS(on) at VGS=10V keeps conduction loss below 0.5 W per device at 10 A load, while the 17 nC Qg minimizes switching losses at 300-500 kHz switching frequencies typical of modern VRMs. Compared to a Schottky-diode rectifier, the IRF8736PBF improves efficiency by 4-6% per phase. Engineers typically pair it with a smaller high-side control FET (e.g., IRF7807) and place it on the bottom of the SO-8 footprint for direct heat-sinking through the drain tab. The logic-level gate threshold allows direct 5 V PWM drive from most notebook controller ICs without a gate-drive IC.
Recomendado
Isolated DC-DC Converter Synchronous Rectifier
In isolated half-bridge and forward converters used in networking and telecom equipment, the IRF8736PBF serves as the secondary-side synchronous rectifier replacing lossy Schottky diodes. The 30 V drain rating accommodates 12 V and 24 V output rails with adequate transient headroom for transformer ringing, while 4.8 mΩ RDS(on) reduces conduction loss to roughly 60% of equivalent diode losses at 10 A load. The 17 nC total gate charge keeps drive losses low even at 200 kHz switching. Its full avalanche characterization ensures survival during momentary body-diode conduction in dead-time transitions. PCB layout places the SO-8 on the bottom copper layer with the drain tab thermally bonded to a 1 in² copper pour.
Recomendado
Hot-Swap / Load Switch on 12V Distribution
The IRF8736PBF can be used as a low-side hot-swap switch or electronic fuse on 12 V distribution rails, with the gate driven by a hot-swap controller that ramps VGS to limit inrush current. Its 18 A continuous current rating covers most blade-server and router distribution loads, while 30 V VDS handles 12 V nominal with margin for transients. The fully characterized avalanche rating provides robustness during turn-off of inductive loads. A typical circuit uses a current-sense resistor in series with the source to drive the controller's IMON input, with the IRF8736PBF sized for either low-loss always-on paths or pulsed gate-control paths in power-ORing topologies.
Recomendado
Battery Protection and OR-ing in Battery Packs
In multi-cell Li-ion battery packs, the IRF8736PBF can serve as a low-side disconnect switch or as an OR-ing MOSFET in redundant battery architectures. The logic-level gate threshold allows direct drive from a fuel-gauge microcontroller at 3.3 V or 5 V, simplifying the protection circuit. The low 4.8 mΩ RDS(on) minimizes voltage drop during high-discharge pulses, preserving battery runtime. The SO-8 footprint is compatible with wave-solder and standard reflow profiles, easing manufacturing of battery-pack BMS boards. Design verification should confirm body-diode reverse recovery is acceptable for the chosen switching frequency.
Recomendado
Motor Drive Low-Side Switch (Brushless DC)
For low-voltage brushless DC motor drives (cordless tools, robotics, small appliances), the IRF8736PBF works as a low-side switch per phase in a 3-phase bridge, paired with P-channel or N-channel high-side devices. Its 18 A continuous rating covers most sub-100 W motors, and 30 V VDS gives ample margin for 24 V motor bus rails. The 17 nC Qg is suitable for PWM frequencies up to 50 kHz, supporting smooth torque control. The fully characterized avalanche rating protects against flyback events when commutating inductive motor windings. Engineers should size the gate-drive resistor to limit ringing and confirm SOA at peak motor-startup currents.
Recomendado
Point-of-Load (POL) Buck Converter Output Stage
The IRF8736PBF suits 5 V and 3.3 V POL converters on motherboards and industrial control boards where space is constrained and efficiency matters. As the synchronous rectifier, its 4.8 mΩ RDS(on) at VGS=10V limits conduction loss to roughly 0.4 W at 10 A load, allowing the SO-8 to stay within its 2.5 W thermal budget on standard 1 oz copper. Logic-level gate drive eliminates the need for a charge-pump or bootstrap drive IC, reducing BOM cost. The IRF8736PBF is well paired with low-side Schottky-free synchronous control where the body-diode forward drop is acceptable for short dead-time intervals. For higher currents, two IRF8736PBF can be paralleled.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRF8736PBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRF8736TRPBF | IRF7832TRPBF | NTTFS4939NTAG | AO4407A | Si4401DDY-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Alpha & Omega Semiconductor | Vishay |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID, TA=25°C) | 18 A | 18 A | 20 A | 16 A | 12 A | 15 A |
| RDS(on) at VGS=10V | 4.8 mΩ | 4.8 mΩ | 6.5 mΩ | 5.2 mΩ | 6.0 mΩ | 5.5 mΩ |
| Total Gate Charge Qg | 17 nC | 17 nC | 23 nC | 19 nC | 21 nC | 20 nC |
| Logic-Level Gate Drive | Yes (optimized for 5V) | Yes | Yes | Yes | Yes | Yes |
| Avalanche Rated | Yes (fully characterized) | Yes | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Lower on-resistance than comparable SO-8 alternatives (frente a IRF7832TRPBF)
- Wider Infineon HEXFET ecosystem with proven JEDEC qualification (frente a AO4407A)
- Fully characterized avalanche voltage and current (frente a Si4401DDY-T1-GE3)
Notas de diseño
Estimated: At ID=10 A and RDS(on)=4.8 mΩ, conduction loss is I²R = 0.48 W. On the datasheet 1 in² copper pad the SO-8 thermal resistance is roughly 50°C/W (datasheet 'When mounted on 1 inch square copper board'), giving a junction-temperature rise of ~24°C above ambient. For continuous 18 A operation, ensure at least 1 oz copper area of 1 square inch plus thermal vias to inner planes. Without this copper area, the device will derate to under 1 A continuous due to its small SO-8 die.
Place the SO-8 drain tab on a continuous copper pour on the top or bottom layer with thermal vias to inner planes. Keep the source-sense and gate-drive traces short and away from the drain switching node to minimize dv/dt-induced gate ringing. A gate-drive resistor of 10-22 Ω dampens ringing; add a 10 kΩ gate-source pull-down to keep the device off during controller power-up. Minimize the high-side-to-low-side switching-loop area to reduce inductive ringing on the SW node.
Do not assume the SO-8 MOSFET can handle 18 A on any board - the 2.5 W dissipation rating only applies on the 1 in² reference copper pad. Always calculate conduction loss (I²R) and verify thermal rise against junction-to-ambient resistance. Logic-level gate threshold (VGS(th)) is typically 1.0-2.5 V; confirm the controller's VOH at the gate pin exceeds VGS(th) by at least 1 V at full load to ensure full enhancement. Avoid exceeding VGS=±20 V absolute maximum.
The IRF8736PBF switches in 10-30 ns typical transition times, generating dv/dt up to 5 V/ns on the SW node. Keep the gate-drive loop area under 0.5 in² to avoid parasitic inductance that causes gate-oscillation and possible shoot-through. Place a 1-10 Ω gate resistor near the gate pin to dampen RLC ringing. For high-side drive, use a bootstrap capacitor sized at 10x Qg to maintain proper gate-drive voltage during the high-side on-time.
Información de cumplimiento
RoHS3 compliant and lead-free per PartGenie compliance summary. MSL 1 (unlimited floor life). Not AEC-Q100 qualified - this part targets consumer/notebook market per Infineon qualification standard. JEDEC-qualified.
