IRF9540NPBF vs IRF9Z24NPBF Comparación
Comparación detallada lado a lado de IRF9540NPBF por Infineon y IRF9Z24NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF9540NPBF | IRF9Z24NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| Tipo de transistor | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Rango de temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado / Carcasa | TO-220AB (through-hole, 3 pins + tab) | — |
| Tipo de montaje | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (Vdss) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -12 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=-10V | — | 0.175 ohm |
| Gate Charge (Qg) typ | — | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.67 C/W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Encapsulado | — | TO-220AB (3-pin) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Gate Threshold Voltage (Vgs(th)) typ | — | [DATA_NEEDED: Vgs(th)] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Technology | — | HEXFET (planar DMOS, Gen 5) |