IRF9540NPBF vs IRF9Z24NPBF 비교
다음의 상세 나란히 비교: IRF9540NPBF 제조: Infineon 및 IRF9Z24NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF9540NPBF | IRF9Z24NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $0.62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| 트랜지스터 유형 | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| 동작 접합 온도 범위 | -55 C to +175 C | — |
| 패키지 / 케이스 | TO-220AB (through-hole, 3 pins + tab) | — |
| 실장 유형 | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (Vdss) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -12 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=-10V | — | 0.175 ohm |
| Gate Charge (Qg) typ | — | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.67 C/W |
| 동작 접합 온도 | — | -55C to +175C |
| 패키지 | — | TO-220AB (3-pin) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Gate Threshold Voltage (Vgs(th)) typ | — | [DATA_NEEDED: Vgs(th)] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Technology | — | HEXFET (planar DMOS, Gen 5) |